In a GTO with homogeneous anode emitter and stop layer, means which short-circuit the stop layer with the anode are provided in the edge termination region. As a result, in the reverse-biased state the GTO has the structure of a diode in the edge region, and the amplification of the reverse current is obviated. Thermal loading in the edge region is reduced, as the component tolerates a higher operating temperature at a predetermined voltage.