The semiconductor module comprises a base element (1), an insulating element (2), which is metallized on both sides and rests on the base element by one of the two metallizations, and at least one semiconductor element (6) arranged on the other of the two metallizations. An electrically insulating layer (51) is arranged in the edge region of the insulating element (2), the surface of this insulating layer forming a common planar surface with the surface of the second metallization The blunting of the edges and corners of the metallization by level embedding of the entire metallized insulating element improves the insulating property of the semiconductor module in the area of the critical electrical field region. Moreover, the arrangement in one plane permits simple and low-cost production.