: TOUGH DIAMONDS AND METHOD OF MAKING THEREOF
Application 214/KOLNP/2006 published 2007-03-30, filed 2006-01-30
A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50-90 GPa and a fracture toughness of 11-20 MPa m 1/2 A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000 °C to about 1100 °C such that the single crystal diamond has a fracture toughness of 11-20 MPa m ½. (FIG. nil)
Applicant
CARNEGIE INSTITUTION OF WAASHINGTON
1530 P STREET, NW, WASHINGTON, DC 20005, U.S.A
Inventor
1. HEMLEY RUSSELL J 2. MAO HO-KWANG 3.YAN CHIH-SHIUE
International Info
Classification: C30B
Publication Number: WO 2005/007935 A2
Application Date: 2004-07-14
Priority Information
60/486,435 U.S.A 2003-07-14