: “ULTRAHARD DIAMONDS AND METHOD OF MAKING THEREOF “

Application 218/KOLNP/2006 published 2007-03-30, filed 2006-01-30
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C to have hardness in excess of 120 GPa. (FIG. nil)

Applicant

CARNEGIE INSTITUTION OF WAASHINGTON
1530 P STREET, NW, WASHINGTON, DC 20005, U.S.A

Inventor

1. HEMLEY RUSSELL J 2. MAO HO-KWANG 3.YAN CHIH-SHIUE

International Info

Classification: C30B
Publication Number: WO 2005/007936 A2
Application Date: 2004-07-14

Priority Information

60/486,435 U.S.A 2003-07-14