BigPatents India

The present invention provides a silicon nitride-bonded SiC refractory which contains SiC as a main phase and Si3N4 and /or Si2N2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9, and a method for producing a silicon nitride-bonded SiC refractory, which comprises a step of mixing 30 to 70% by ;mass of a SiC powder of 30 to 300 µm as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 µm, 10 to 30% by mass of a Si powder of 0.05 to 30 µm, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg. According to the silicon nitride-bonded SiC refractory ;and the method for production thereof, there can be obtained a refractory which has heat resistance, thermal shock resistance and oxidation resistance and which is high in strength and superior in creep resistance ;and thermal conductivity. (FIG. nil)