BigPatents India

The present invention relates to the technology of growing single crystals from melts on a seed crystal. The technical problem to be solved by the present invention is to provide a universal method of growing single crystals of various chemical composition, for example, of A2B6 and A2B5 type, and also single crystals of refractory oxides, such as sapphire. The technical result of the claimed invention is its universality with regard to the material of the single crystal to be grown, enhanced performance, and improved structural finish of resulting single crystals by ruling out melt overcooling in the coursed of growing. The technical result is attained by that in the method of growing single crystals from melt, which comprises fusing the starting material and pulling a single crystal by crystallization of the melt on a seed crystal with controlled removal of the crystallization heat and using independent heating sources constituting thermal zones, according to the invention, independent heating sources constitute two equal sized coaxially arranged thermal zones, which make up a united thermal area for the melt and the single crystal being grown and are separated by the melt starting material being carried out heating the upper thermal zone with heater 30-50% of power required for obtaining the melt, until in the upper thermal zone maximum temperature is reached, which secure stable state of the solid phase of the seed crystal; then the remaining power is supplied to the lower heater with maintaining constant temperature of the upper thermal zone till complete melting of the charge; the process of the single crystal enlargement and growing is conducted with controlled lowering of temperature in the upper in the upper thermal zone, the amount of power supplied to the lower thermal zone being preserved constant.