"POWER SEMICONDUCTOR WITH VARIABLE PARAMETERS"
Application 463/CHE/2003 published 2007-07-27, filed 2003-06-06
The power semiconductor component has a pn junction between two power electrodes (2, 3). A control electrode (4) is arranged in the region of one of the two power electrodes (3). A current can be fed in via the control electrode, which current can be used to raise the current through the power electrodes. As a result, the reverse current can be raised in the blocking state of the component. This allows a plurality of the power semiconductor components according to the invention to be connected in series without additional snubber circuitry for protection against overvoltages.
Applicant
1)ABB SCHWEIZ AG
:BROWN BOVERI STRASSE 6, CH-5400 BADEN Switzerland
Inventor
1)STRETT 2)APELDOORN 3)STEMIER
International Info
Classification: H 01 L 29/00
Priority Information
02405467.8 Germany 2002-06-10